DOBBS H. | Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College

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Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College | 論文

• A Scanning Tunneling Microscopy-Reflection High Energy Electron Diffraction-Rate Equation Study of the Molecular Beam Epitaxial Growth of InAs on GaAs(001), (110) and (111)A-Quantum Dots and Two-Dimensional Modes ( Quantum Dot Structures)

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