Kim Tae | National Research Laboratory for Nano Quantum Electronics Devices, Department of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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- National Research Laboratory for Nano Quantum Electronics Devices, Department of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Koreaの論文著者
National Research Laboratory for Nano Quantum Electronics Devices, Department of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea | 論文
- Multibit Polycristalline Silicon–Oxide–Silicon Nitride–Oxide–Silicon Memory Cells with High Density Designed Utilizing a Separated Control Gate
- Decrease in Interference Effects between Cells for Metal--Oxide--Nitride--Oxide--Silicon NAND Flash Memory Devices with Metal Spacer Layers