黒田 正夫 | 理化学研究所,日本雪氷学会
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概要
論文 | ランダム
- Structures and Properties of (ZnS)_n(ZnSe)_m(n=1-4) Ordered Alloys Grown by Atomic Layer Epitaxy
- Si Epitaxy below 400℃ from Fluorinated Precursors SiF_nH_m (n + m ≤ 3) under In Situ Observation with Ellipsometry
- Structure of Polycrystalline Silicon Thin Film Fabricated from Fluorinated Precursors by Layer-by-Layer Technique
- Structural and Electrical Properties of n-Type Poly-Si Films Prepared by Layer-by-Layer Technique
- In Situ Ellipsometric Observations of the Growth of Silicon Thin Films from Fluorinated Precursors, SiF_nH_m(n+m