古村 崇 | 川田建設(株)環境事業推進部
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概要
論文 | ランダム
- Dislocation-Free Czochralski Si Crystal Growth without the Dash-Necking Process : Growth from Undoped Si Melt
- Heavily Boron-Doped Silicon Single Crystal Growth:Constitutional Supercooling
- SiO Vapor Pressure in an SiO_2 Glass/Si Melt/SiO Gas Equilibrium System
- Heavily Boron-Doped Silicon Single Crystal Growth: Boron Segregation
- Silicon Crystal Growth under Equilibrium Condition of SiO_2-Si-SiO System: Equilibrium Oxygen Segregation Coefficient