Kinoshita Atsuhiro | Corporate Research & Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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- Corporate Research & Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japanの論文著者
Corporate Research & Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan | 論文
- Effect of Composition in Ternary La–Al–O Films on Flat-Band Voltage for Application to Dual High-$k$ Gate Dielectric Technology
- Performance and Reliability Improvement of HfSiON Field-Effect Transistor with Low Hafnium Concentration Cap Layer Formed by Metal Organic Chemical Vapor Deposition with Diethylsilane