Saito Shinsaku | NEC Corporation, Device Platforms Research Laboratories, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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- NEC Corporation, Device Platforms Research Laboratories, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japanの論文著者
NEC Corporation, Device Platforms Research Laboratories, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan | 論文
- Improvement of Thermal Stability of Magnetoresistive Random Access Memory Device with SiN Protective Film Deposited by High-Density Plasma Chemical Vapor Deposition
- Electron Holography Characterization of Ultra Shallow Junctions in 30-nm-Gate-Length Metal–Oxide–Semiconductor Field-Effect Transistors