Hasegawa Hideki | Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University, North-13, West-8, Sapporo 060-8628, Japan

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• Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University, North-13, West-8, Sapporo 060-8628, Japanの論文著者

Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University, North-13, West-8, Sapporo 060-8628, Japan | 論文

• Bulk and Interface Deep Levels in InGaP/GaAs Heterostructures Grown by Tertiarybutylphosphine-Based Gas Source Molecular Beam Epitaxy

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