Kang Young-Min | Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do 449-711, Korea

スポンサーリンク

概要

• Kang Young-Minの詳細を見る
• 同名の論文著者
• Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do 449-711, Koreaの論文著者

Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do 449-711, Korea | 論文

• Robust Three-Metallization Back End of Line Process for 0.18 μm Embedded Ferroelectric Random Access Memory

もっと見る

スポンサーリンク