Ohta Y | R&d Group Wacker Nsce Corporation
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概要
R&d Group Wacker Nsce Corporation | 論文
- Crystal Defects in Epitaxial Layer on Nitrogen-doped Czochralski-grown Silicon Substrate (II) : Suppression of the Crystal Defects in Epitaxial Layer by the Control of Crystal Growth Condition and Carbon Co-doping
- Crystal Defects in Epitaxial Layer on Nitrogen-doped Czochralski-grown Silicon Substrate (I) : Investigation of the Crystallographic Structure
- Influence of Atmosphere on Molten Silicon Density
- Temperature Dependence of the Electrical Resistivity of Molten Silicon
- Positron Annihilation in Proton Irradiated Czochralski-Grown Si