Fujiwara I | Ulsi R&d Laboratories Lsi Business & Technology Development Group Cnc Sony Corporation
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概要
Ulsi R&d Laboratories Lsi Business & Technology Development Group Cnc Sony Corporation | 論文
- 0.13μm Metal-Oxide-Nitride-Oxide-Semiconductor Single Transistor Memory Cell with Separated Source Line
- Analysis of Carrier Traps in Si_3N_4N_4 in Oxide/Nitride/Oxide for Metal/Oxide/Nitride/Oxide/Silicon Nonvolatile Memory
- Friction Force Microscopy Study of the Langmuir-Blodgett Films with Different Molecular Structures