菊池 哲 | 国立がんセンター研究所化学療法部|東京医科大学外科学第三講座
スポンサーリンク
概要
論文 | ランダム
- High Performance AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors Fabricated Using SiN/SiO2/SiN Triple-Layer Insulators (Special Issue: Solid State Devices & Materials)
- AlGaN/GaN MIS-HEMTs Fabricated Using SiN/SiO_2/SiN Triple-Layer Insulators
- Goat Liver Catalase Immobilized on Various Solid Supports
- Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
- Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency