YOSHIMASA TAKAAKI | Department of Medicine, Kyoto University School of Medicine
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概要
論文 | ランダム
- 4H-SiC Power Metal–Oxide–Semiconductor Field Effect Transistors and Schottky Barrier Diodes of 1.7 kV Rating
- Triple Shockley type stacking faults in 4H-SiC epilayers
- Dicarbon antisite defect in n-type 4H-SiC
- Thermal Conductivity of SiC Calculated by Molecular Dynamics
- Positron Trapping Sites Originating from Oxide Interfaces on 4H-SiC C($000\bar{1}$)- and Si(0001)-Faces