小西 龍俊 | 学習院大学:科技団
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概要
論文 | ランダム
- High Output Power 365nm Ultraviolet Light Emitting Diode of GaN-Free Structure : Semiconductors
- Characteristics of Ultraviolet Laser Diodes Composed of Quaternary Al_xIn_yGa_N : Semiconductors
- Ultraviolet GaN Single Quantum Well Laser Diodes
- High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates
- InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates