寺内 美奈 | 職業大 the Division of Vocational Ability Development
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論文 | ランダム
- 29.X線検査時の表面線量測定 : 第一報 胸部routine検査(◇中四国部会(第21回))
- Febrication of InP/GaInAs Double Heterojunction Bipolar Transistors with a 0.1-μm-Wide Emitter : Semiconductors
- InP DHBT with 0.5μm Wide Emitter alongDirection toward BM-HBT with Narrow Emitter(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Reduction of Base-Collector Capacitance inSubmicron InP/GalnAs Heterojunction Bipolar Transistors with Buried Tungsten Wires : Semiconductors
- Peak Width Analysis of Current-Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes