Nagao S. | Institute of Scientific and Industrial Research, Osaka University
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概要
Institute of Scientific and Industrial Research, Osaka University | 論文
- Positive-Negative Inversion of Silicon Based Resist Materials:Poly(di-n-hexylsilane)for Ion Beam Irradiation
- Charge Transport Properties of Hexabenzocoronene Nanotubes by Field Effect : Influence of the Oligoether Side Chains on the Mobility
- Mobilities of Charge Carriers in Dendrite and Linear Oligogermanes by Flash Photolysis Time-resolved Microwave Conductivity Technique
- Delocalization of Positive and Negative Charge Carriers on Oligo- and Poly-fluorenes Studied by Low-Temperature Matrix Isolation Technique
- Electronic Structure of Polysilanes Studies by Femtosecond Laser Flash Photolysis