Saiga Yuta | ²Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan

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概要

• Saiga Yutaの詳細を見る
• 同名の論文著者
• ²Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japanの論文著者

論文 | ランダム

• A new spin-functional metal-oxide-semiconductor field-effect transistor based on magnetic tunnel junction technology: pseudo-spin-MOSFET
• Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer
• Transient Characteristic of Fabricated Magnetic Tunnel Junction (MTJ) Programmed with CMOS Circuit
• Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET
• Study on Quantum Electro-Dynamics in Vertical MOSFET

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