Abe Katsuya | Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152–8552, Japan
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概要
- Abe Katsuyaの詳細を見る
- 同名の論文著者
- Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152–8552, Japanの論文著者
論文 | ランダム
- Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
- 4弗化エチレン樹脂高性能フィルタ-
- Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
- 角度分解光電子分光法による深さ方向組成分析の高精度化の試み
- Electric characteristics of Si_3N_4 films formed by directly radical nitridation on Si (110) and Si (100) surfaces