Nagaosa Naoto | ³Department of Applied Physics, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

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概要

• 同名の論文著者
• ³Department of Applied Physics, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japanの論文著者

論文 | ランダム

• Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-end Metal Line of CMOS Circuits
• Transient characteristic of fabricated Magnetic Tunnel Junction (MTJ) programmed with CMOS circuit
• In vitro inhibition of compression-induced catabolic gene expression in meniscal explants following treatment with IL-1 receptor antagonist
• On the diffraction of electromagnetic waves
• Geometry of weakly symmetric spaces

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