河村 奈緒子 | 北光記念病院栄養科
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- 第27回公開講演会講演 生物の運動・分子の運動
- Low threshold voltage and high mobility N-channel metal-oxide-semiconductor field-effect transistor using Hf-Si/HfO2 gate stack fabricated by gate-last process
- 対麻痺者用新歩行装具 (HALO) の歩行分析
- Tinv scaling and gate leakage reduction for n-type metal oxide semiconductor field effect transistor with HfSi[x]/HfO2 gate stack by interfacial layer formation using ozone-water-last treatment (Special issue: Solid state devices and materials)
- P-35 BIOMECHANICAL ANALYSIS OF WRIST JOINT LOADING BETWEEN OPEN AND CLOSE KINETIC CHAIN EXERCISE