NAGAI Kiyohisa | Deparatment of Nuclear Medicine, Kawasaki Medical School
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概要
論文 | ランダム
- N2O-grown oxides/4H-SiC (0001), (0338), and (1120) interface properties characterized by using p-type gate-controlled diodes
- Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistor by High-Temperature Annealing
- Nonpolar 4H-AlN grown on 4H-SiC (1(1)over-bar00) with reduced stacking fault density realized by persistent layer-by-layer growth
- First-Principles Study of BN, SiC, and AlN Polytypes(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Electrical and Optical Modeling of 4H-SiC Avalanche Photodiodes