塚本 征利 | 日本鉱業 (株) 日立製錬所
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概要
論文 | ランダム
- Optical absorption and photoluminescence in the ternary chalcopyrite semiconductor AgInSe2
- Properties of GaP(001) surfaces chemically treated in NH4OH solution
- Ultraviolet emission from porous silicon photosynthesized in aqueous alkali fluoride solutions
- Strong and stable ultraviolet emission from porous silicon prepared by photoetching in aqueous KF solution
- Structural and photoluminescence properties of porous GaP formed by electrochemical etching