Nakanishi Hisayuki | Department of Electrical Engineering, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278-8510, Japan

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• Nakai Rikuroの詳細を見る
• 同名の論文著者
• Department of Electrical Engineering, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278-8510, Japanの論文著者

Department of Electrical Engineering, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278-8510, Japan | 論文

• Structural Properties of GaN Films with AlN Buffer Layers with Varying Growth Temperatures by Plasma-Assisted Molecular Beam Epitaxy

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