BEBKO James | Department of Information Processing, Tokyo Institute of Technology Graduate School, 4259, Nagatsuta, Midori–ku, Yokohama, 226 Japan
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- BEBKO James M.の詳細を見る
- 同名の論文著者
- Department of Information Processing, Tokyo Institute of Technology Graduate School, 4259, Nagatsuta, Midori–ku, Yokohama, 226 Japanの論文著者
論文 | ランダム
- A novel body-tied fin field effect transistor flash memory structure with λ-shaped floating gate for sub 45nm NOR flash memory
- Comparative study of p[+]/n[+] gate modified saddle metal oxide semiconductor field effect transistors and P[+]/n[+] gate bulk fin field effect transistors for sub-40nm dynamic random access memory cell transistors
- Performance comparison between asymmetric polycrystalline silicon gate and TiN gate fin-shaped field effect transistors (Special issue: Microprocesses and nanotechnology)
- Design of bulk fin-type field-effect transistor considering gate work-function
- Threshold-voltage modeling of bulk fin field transistors by considering surface potential lowering