中西 輝薫 | 一般社団法人 日本繊維技術士センター
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概要
論文 | ランダム
- Selective Area Growth of InP and InGaAs Layers on SiO_2-Masked Substrate by Chemical Beam Epitaxy
- In_Ga_As/InP Mutiquantum Well Lasers Grown by Metalorganic Molecular beam Epitaxy (MOMBE)
- Anomalies in Giant Quantum Attenuation of Sound Waves in Bismuth at High Magnetic Fields. II. : Existence of Extra Attenuation Peaks
- Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAs
- Anomalies in Giant Quantum Attenuation of Sound Waves in Bismuth at High Magnetic Fields. I. : Temperature and Frequency Dependences