NAGAE T. | 2nd Dept. Obst. & Gynec., Sch. Med., Toho Univ.
スポンサーリンク
概要
論文 | ランダム
- First principles investigation on the modifications of the 4H-SiC band structure due to the (4,4) and (3,5) stacking faults
- Reduction of threading dislocation density in 2H-AlN grown on 6H-SiC(0001) by minimizing unintentional active-nitrogen exposure before growth
- Semiconductor-metal transition and band-gap tuning in quasi-free-standing epitaxial bilayer graphene on SiC
- 招待講演 GaN,SiC パワーデバイスの車載応用 (シリコン材料・デバイス)
- 3C-SiC-OI基板上でのMOSゲート絶縁膜のプロセス依存性 (マイクロ波)