Kochnev Igor | A.F.Ioffe Physico-Technical Institute of Russian Academy of Sciences
スポンサーリンク
概要
A.F.Ioffe Physico-Technical Institute of Russian Academy of Sciences | 論文
- Multi-Stacked InAs/InGaAs/InP Quantum Dot Laser (j_=11 A/cm^2, λ=1.9μm (77 K))
- Vertically Coupled Quantum Dot Lasers : First Device Oriented Structures with High Internal Quantum Efficiency ( Quantum Dot Structures)
- Collective Resonance and Form-Factor of Homogeneous Broadening Semiconductors
- Negative Characteristic Temperature of InGaAs Quantum Dot Injection Laser ( Quantum Dot Structures)
- InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T_0 = 385 K) Grown by Metal Organic Chemical Vapour Deposition ( Quantum Dot Structures)