Hamada Kouichi | ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
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概要
- Hamada Kouichiの詳細を見る
- 同名の論文著者
- ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japanの論文著者
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan | 論文
- Low Temperature Deposition of (Ba, Sr)TiO3 Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
- Low Temperature Recovery of Ru(Ba, Sr)TiO_3/Ru Capacitors Degraded by Forming Gas Annealing
- Low Temperature Deposition of (Ba, Sr)TiO_3 Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition