Yanagihara Mihiro | Research Institute for Scientific Measurements, Tohoku University, Sendai 980–77
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- Yanagihara Mihiroの詳細を見る
- 同名の論文著者
- Research Institute for Scientific Measurements, Tohoku University, Sendai 980–77の論文著者
論文 | ランダム
- High Output Power 365nm Ultraviolet Light Emitting Diode of GaN-Free Structure : Semiconductors
- Characteristics of Ultraviolet Laser Diodes Composed of Quaternary Al_xIn_yGa_N : Semiconductors
- Ultraviolet GaN Single Quantum Well Laser Diodes
- High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates
- InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates