Cho Woon | Applied Physics Laboratory, Division of Electronics and Information Technology, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul, Korea
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- 同名の論文著者
- Applied Physics Laboratory, Division of Electronics and Information Technology, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul, Koreaの論文著者
論文 | ランダム
- Proposal of a Single-Transistor-Cell-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on the Interference Problem in the Write Operation
- Non-Volatile Metal-Ferroelectric-Insulator-Semiconductor(MFIS)FETs Using PLZT/STO/Si(100) Structures
- Proposal of a Single-Transistor-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on Interference Problem in Write Operation
- Ferroelectric Properties of BaMgF4 Films Grown on Si(100), (111), and Pt(111)/SiO2/Si(100) Structures
- Ferroelectric Properties of BaMgF_4 Films Grown on Si(100), (111), and Pt(111)/SiO_2/Si(100) Structures