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- Novel Extended-Pi Shaped Silicon-Germanium (eII-SiGe) Source/Drain Stressors for Strain and Performance Enhancement in P-Channel FinFETs
- Strained N-channel FinFETs with High-stress Nickel Silicide-Carbon Contacts and Integration with FUSI Metal Gate Technology
- Diamagnetic Signal in a Plasma Column with an Inflection Point
- Reduction of Electromagnetic Penetration through Narrow Slots in Conducting Screen by Two Parallel Wires(Electromagnetic Compatibility (EMC))
- Optical Signal Processing and Switching with Second-Order Nonlinearities in Waveguides(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)