Nakamura Isao | Department of Electrical Engineering, Kogakuin University, 1–24–2 Nishi–Shinjuku, Shinjuku–ku, Tokyo 163–91, Japan
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- Nakamura Isaoの詳細を見る
- 同名の論文著者
- Department of Electrical Engineering, Kogakuin University, 1–24–2 Nishi–Shinjuku, Shinjuku–ku, Tokyo 163–91, Japanの論文著者
論文 | ランダム
- 29p-L-2 Characteristics of SrTa_2Bi_2O_9 thin films grown by MOCVD using a new strontium tantalum ethoxide(Sr[Ta(OEt)_6]_2)source
- 28p-K-14 バブリング供給用にSr(OEt)_2を添加したSr[Ta(OEt)_6]_2の蒸気組成と物性
- 2J14 R-Si(OEt)_3 を用いたゾルゲル法による SiO_2 系膜の細孔径制御
- Electrostatic Phenomena in π-conjugated Langmuir-Blodgett Films on Metal Electrodes
- Synthesis of Chiral Epibromohydrin Monomers and Effects of Solvent and Initiator Concentration on their Oligomerization