Arai Masakazu | Microsystem Research Center, P&I Lab., Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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概要
- 同名の論文著者
- Microsystem Research Center, P&I Lab., Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japanの論文著者
Microsystem Research Center, P&I Lab., Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan | 論文
- 1.2μm Band GaInAs/GaAs High-Density Multiple-Wavelength Vertical Cavity Surface Emitting Laser Array
- Effect of Annealing on Highly Strained GaInAs/GaAs Quantum Wells : Semiconductors
- Low Threshold Current Density Operation of 1.16μm Highly Strained GaInAs/GaAs Vertical Cavity Surface Emitting Lasers on (100) GaAs Substrate : Optics and Quantum Electronics
- Analysis of Transverse-Mode Control in Vertical-Cavity Surface-Emitting Lasers Using a Convex Mirror
- Analysis on the Compensating Thermal Lensing Effect Using a Convex Mirror in Vertical-Cavity Surface-Emitting Lasers