藤井 俊光 | 東京医科歯科大学消化器内科，潰瘍性大腸炎・クローン病先端治療センター
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論文 | ランダム
- Design of bulk fin-type field-effect transistor considering gate work-function
- Threshold-voltage modeling of bulk fin field transistors by considering surface potential lowering
- Recessed channel fin field-effect transistor cell technology for future-generation dynamic random access memories (Special issue: Solid state devices and materials)
- Novel extended-Pi shaped silicon-germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistor (Special issue: Solid state devices and materials)
- Discrete-dopant-fluctuated threshold voltage roll-off in sub-16nm bulk fin-type field effect transistors (Special issue: Solid state devices and materials)