Nakata Shunji | NTT Telecommunications Energy Laboratories, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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概要
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- 同名の論文著者
- NTT Telecommunications Energy Laboratories, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japanの論文著者
論文 | ランダム
- Surface and Interface Smoothing of Epitaxial CoSi_2 Films by Solid-Phase Epitaxy Using Adsorbed Oxygen Layers and Two-Step Growth on Si(001) Surfaces
- Structural and Electrical Characteristics of HfO_2 Films Fabricated by Pulsed Laser Deposition
- Growth Processes and Electrical Characteristics of Silicon Nitride Films Formed on Si(100) by Radical Nitrogen
- 魚類の食害防止ネットを用いた核藻場造成実証実験について (その4)
- Electrical Properties and Solid-Phase Reactions in Ni/Si(100) Contacts