大澤 雅俊 | 北海道大学 触媒化学研究センター
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概要
論文 | ランダム
- A novel body-tied fin field effect transistor flash memory structure with λ-shaped floating gate for sub 45nm NOR flash memory
- Comparative study of p[+]/n[+] gate modified saddle metal oxide semiconductor field effect transistors and P[+]/n[+] gate bulk fin field effect transistors for sub-40nm dynamic random access memory cell transistors
- Performance comparison between asymmetric polycrystalline silicon gate and TiN gate fin-shaped field effect transistors (Special issue: Microprocesses and nanotechnology)
- Design of bulk fin-type field-effect transistor considering gate work-function
- Threshold-voltage modeling of bulk fin field transistors by considering surface potential lowering