Hong Feng–Lei | National Research Laboratory of Metrology, 1–1–4 Umezono, Tsukuba, Ibaraki 305, Japan
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概要
- Hong Feng–Leiの詳細を見る
- 同名の論文著者
- National Research Laboratory of Metrology, 1–1–4 Umezono, Tsukuba, Ibaraki 305, Japanの論文著者
論文 | ランダム
- Characteristics of pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect
- ZrO_2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
- Effect of Post-Treatments on Atomic Layer Deposition of TiN Thin Films Using Tetrakis(dimethylamido)titanium and Ammonia :Surfaces, Interfaces, and Films
- Diel rhythms of calling behavior and temporal change in pheromone production of the rice leaffolder moth, Cnaphalocrocis medinalis (Lepidoptera: Crambidae)
- NH3-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability