Hoshikawa Akinori | <label>³</label>Frontier Research Center for Applied Atomic Science, Ibaraki University, Tokai, Ibaraki 319-1106, Japan

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• Hoshikawa Akinoriの詳細を見る
• 同名の論文著者
• <label>³</label>Frontier Research Center for Applied Atomic Science, Ibaraki University, Tokai, Ibaraki 319-1106, Japanの論文著者

論文 | ランダム

• Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H-SiC (11(2)over-bar0)
• Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H-SiC substrate by HCl gas etching
• Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode
• Reduction of doping and trap concentrations in 4H-SiC epitaxial layers grown by chemical vapor deposition
• Recent Progress in SiC Ion Implantation and MOS Technologies for High Power Devices

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