Fujikura Hajime | Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University, Sapporo 060, Japan
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- Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University, Sapporo 060, Japanの論文著者
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- Single Crystal Growth and Magnetic Properties of UTe2 (Proceedings of the 5th International Symposium on Advanced Science Research in Celebration of the World Year of Physics 2005(ASR-WYP-2005): Advances in the Physics and Chemistry of Actinide Compounds)
- Single Crystal Growth and Magnetic Properties of Neptunium Compounds (Proceedings of the 5th International Symposium on Advanced Science Research in Celebration of the World Year of Physics 2005(ASR-WYP-2005): Advances in the Physics and Chemistry of Acti
- Single Crystal Growth, Superconductivity and Fermi Surface Study of Plutonium Compounds (Proceedings of the 5th International Symposium on Advanced Science Research in Celebration of the World Year of Physics 2005(ASR-WYP-2005): Advances in the Physics an
- First Observation of de Haas-van Alphen Effect in PuIn_3(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Itinerant 5f Electrons and the Fermi Surface Properties in an Enhanced Pauli Paramagnet NpGe_3(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)