Shibata Jun | ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporation, 19 Nishikujo-kasugacho, Minami-ku, Kyoto 601-8413, Japan
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- ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporation, 19 Nishikujo-kasugacho, Minami-ku, Kyoto 601-8413, Japanの論文著者
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporation, 19 Nishikujo-kasugacho, Minami-ku, Kyoto 601-8413, Japan | 論文
- Analysis of Gate Disturbance Degradation by Nitridation of Flash Tunnel Oxide
- Extendibility of Ta2O5 Metal-Insulator-Metal Capacitor Using Ru Electrode