城所 仂 | 順天堂大学医学部第1外科学教室
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概要
論文 | ランダム
- Influence of SiC Cover Layer of Si Substrate on Properties of Cubic SiC Films Prepared by Hydrogen Plasma Sputtering
- Infrared Absorption Properties of Nanocrystalline Cubic SiC Films
- Behaviors of Carbon at Initial Stages of SiC Film Grown on Thermally Oxidized Si Substrate
- Observation of the Formation Processes of Hollow Voids at the Interface between SiC Film and Si Substrate
- Low-Temperature Growth of Oriented Silicon Carbide on Silicon by Reactive Hydrogen Plasma Sputtering Technique