吉田 隆夫 | 大日本塗料 (株) 技術開発部 第三開発室
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概要
論文 | ランダム
- Positive bias instability of bottom-gate zinc oxide thin-film transistors with a SiOx/SiNx-stacked gate insulator (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)
- Light response of top gate InGaZnO thin film transistor (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)
- All-inkjet-printed organic thin-film transistors with silver gate, source/drain electrodes (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)
- Stability diagrams of triple-dot single-electron device with single common gate
- New bidirectional T-shaped triple-gate n-type polycrystalline silicon thin-film transistors formed by low-temperature sequential lateral solidification process to reduce of kink effects