長野 靖尚 | 名古屋工業大学理事
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概要
論文 | ランダム
- Experimental study on Improving Unclamped Inductive Switching Characteristics of the New Power MOSFET Employing Deep Body Contact
- Suppression of the leakage current of a Ni/Au Schottky Barrier Diode fabricated on AlGaN/GaN hetero-structure by oxidation
- A New ICP-CVD SiO_2 Passivation for High Voltage Switching AlGaN/GaN HFETs
- 遺伝的アルゴリズムを用いた対話型作文支援システム
- AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching Applications