間部 謙三 | NEC システムデバイス研究所
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概要
論文 | ランダム
- Eikonal Reaction Theory for Neutron Removal Reaction
- 宇宙溶接技術の研究開発
- Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation
- Effect of Composition in Ternary La–Al–O Films on Flat-Band Voltage for Application to Dual High-$k$ Gate Dielectric Technology
- Improvement of Device Characteristics for TiN Gate p-Type Metal–Insulator–Semiconductor Field-Effect Transistor with Al2O3-Capped HfO2 Dielectrics by Controlling Al2O3 Diffusion Annealing Process