宮城 新 | ブリヂストン・タイヤ株式会社研究開発部
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概要
論文 | ランダム
- Embedded Nanowire Network Growth and Node Device Fabrication for GaAs-Based High-Density Hexagonal BDD Quantum Circuits
- Growth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates
- Investigation of Side-gating Effects in GaAs-based Quantum Wire Transistor (QWRTr) utilizing Nanosized Schottky Gates
- Study on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0001) substrates
- Cross-Sectional Evolution and Its Mechanism during Selective Molecular Beam Epitaxy Growth of GaAs Quantum Wires on (111)B Substrates