John W. | マサチューセッツ総合病院 NMRセンター
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概要
論文 | ランダム
- Bandgap Energy of InGaAsP Quaternary Alloy
- Preparation and Properties of InGaAsP p-n Junction for Fabrication of Photodetectors in Optical Communication Systems : III-4: III-V COMPOUND SOLAR CELLS AND DETECTORS
- Analysis of the Exciton Luminescence of Silicon for Characterization of the Content of Impurities
- Observation of Deep Impurity Levels in In_GA_As_P_
- Bound Multiexciton Luminescence in Boron-Doped Silicon: Excitation-Level Dependence and Recombination Kinetics