板橋 螢二 | (株) 大林組電子計算センター大阪電算課
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概要
論文 | ランダム
- Surface Preparation, Growth, and Interface Control of Ultrathin Gate Oxides
- Simultaneous Observation of SiO_2 Surface and SiO_2/Si Interface Using Self-Assembled-Monolayer Island
- Spectroscopic and Theoretical Studies of Interface States at Ultrathin Oxide/Si Interfaces
- Interface States at Ultrathin Chemical Oxide/Silicon Interfaces Obtained from Measurements of XPS Spectra under Biases
- Interface States for Si-Based MOS Devices with an Ultrathin Oxide Layer : X-Ray Photoelectron Spectroscopic Measurements under Biases